For decades, the power brick in your backpack was constrained by silicon physics. Pushing 100W+ through traditional silicon transistors generated intolerable thermal spikes and required hefty heatsinks, heavy copper windings, and bulky enclosures.

Gallium Nitride (GaN) features a bandgap of 3.4 electron-volts compared to silicon's 1.1 eV. This wider bandgap enables electrons to navigate crystal lattices at dramatically higher switching frequencies without thermal degradation. Our Volt 200W switches at 1.2MHz—over 8 times faster than legacy silicon.

Coupled with our proprietary NovaSense MCU, the charger interrogates connected devices via USB-PD 3.1 Extended Power Range protocols every 250 milliseconds, dynamically shifting wattages between your 16-inch laptop, iPad Pro, and smartphone without momentarily dropping power.

For decades, the power brick in your backpack was constrained by silicon physics. Pushing 100W+ through traditional silicon transistors generated intolerable thermal spikes and required hefty heatsinks, heavy copper windings, and bulky enclosures.

Gallium Nitride (GaN) features a bandgap of 3.4 electron-volts compared to silicon's 1.1 eV. This wider bandgap enables electrons to navigate crystal lattices at dramatically higher switching frequencies without thermal degradation. Our Volt 200W switches at 1.2MHz—over 8 times faster than legacy silicon.

Coupled with our proprietary NovaSense MCU, the charger interrogates connected devices via USB-PD 3.1 Extended Power Range protocols every 250 milliseconds, dynamically shifting wattages between your 16-inch laptop, iPad Pro, and smartphone without momentarily dropping power.